Single bw

18-Aug-2017 00:16

The material can be doped to control the Johnsen-Rahbek effect.This type of dielectric manufacture is being tested in semiconductor applications and results to date indicate it will successfully meet device manufacturer requirements.The dielectric strength is rated at 305 volts per mil.The Aluminum Nitride ESC is more expensive than the other types. The Polyimide can be applied over a metal plate to form a capacitor to the substrate. The breakdown voltage for the Polyimide coating is rated at 560 volts per mil.The substrate is connected through the plasma to ground.This implies that the substrate is not securely clamped prior to exposing the substrate to the plasma or other return path.In Figure 1 the lower plate is connected to a DC power supply.

This gives increased clamping over a non-doped device.

This reduces the effective distance between the plates.

The result is an increase in the capacitance due to a decrease in the distance between the plates.

There are two plates with a dielectric between them.

The lower plate can be considered the metal mounting for the dielectric.

This gives increased clamping over a non-doped device.

This reduces the effective distance between the plates.

The result is an increase in the capacitance due to a decrease in the distance between the plates.

There are two plates with a dielectric between them.

The lower plate can be considered the metal mounting for the dielectric.

Bipolar In the bipolar configuration the ESC can clamp the substrate irrespective of a plasma.